| http://www.w3.org/ns/prov#value | - The p-well 2PW is formed by distributing an impurity, such as boron (B) or the like, which extends from the main surface of the semiconductor substrate 1 (i.e. an element-forming surface) to a given depth, and the n-well 2NW is formed by distributing an impurity, such as phosphorus (P) or arsenic (As), to extend from the main surface of the semiconductor substrate 1 to a given depth. [0099] The se
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