About: http://webisa.webdatacommons.org/305886902

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	The insulated gate bipolar transistor of claim 8, wherein said field effect transistor comprises a first conductivity type channel enhancement-mode MOSFET at said second face and wherein said insulating region is a dielectric material
http://www.w3.org/ns/prov#wasQuotedFrom	patents.com