| http://www.w3.org/ns/prov#value | - The method according to claim 10, wherein the processing target member includes a semiconductor substrate, a silicon dioxide (SiO2) film provided on the semiconductor surface and an insulating film including at least one of a fluorine-doped silicon oxide (SiOF), a carbon- and fluorine-doped silicon oxide (SiOCF), a nitrogen- and fluorine-doped silicon oxide (SiONF), and at least one of the trench
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