| http://www.w3.org/ns/prov#value | - The top surface of the insulating material 26 and the top surface of the ruthenium layer 24 are removed by process such as etch back or chemical mechanical polishing (CMP) until the surface of the silicon oxide layer 22 is exposed, thereby forming a 20 recessed ruthenium layer 24 a and a recessed insulating material 26 a as shown in FIG. 2B. To make a cylindrical ruthenium layer, the silicon oxide
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