| http://www.w3.org/ns/prov#value | - This is because the contamination of the interface between the single-crystal silicon substrate and the insulating substrate such as a glass substrate and the influence of a fixed electric charge caused by the distortion or incompleteness of the lattice are relieved. [0412] Thus, according to the present invention, the variation of the threshold is restrained in the case of a MOS transistor made f
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