| http://www.w3.org/ns/prov#value | - The method of claim 8 wherein said semiconductor die is a mosfet and said first terminal region is a source region, said control region is a gate region, said second terminal region is a drain region, and wherein said first terminal pad structure and lead are a source pad and lead, said control pad structure and lead are a gate pad and lead, and said second terminal pad structure and lead are a dr
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