| http://www.w3.org/ns/prov#value | - Thus, in providing the connection between the upper and lower wiring layers, a refractory metal silicide film whose silicon content is greater than 0 but less than 2 (that is, QSix, where Q is a refractory metal such as Mo, Ta, Ti and W, etc., and 0???2) is disposed between the first aluminum wiring, to which an element for reducing migration is included, and a second aluminum wiring provided as a
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