| http://www.w3.org/ns/prov#value | - Therefore, the stress applied from the mother substrate 11 to the n-type contact layer 32 when the n-type contact layer 32 is grown again, the semiconductor layers including the quantum well active layer 35 are further grown thereon and then the epitaxial substrate is cooled back to room temperature, which is caused by the difference in the thermal expansion coefficient between the mother substrat
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