| http://www.w3.org/ns/prov#value | - The stack is on a semiconductor substrate, and the stack comprises (i) a gate layer, comprising silicon, (ii) a metallic layer, on the gate layer, and (iii) an etch-stop layer, on the metallic layer.In a third aspect, the present invention is a method of forming a semiconductor structure, comprising forming a nitride layer on a stack by CVD, and etching the nitride layer to form spacers in contact
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