| http://www.w3.org/ns/prov#value | - The devicesshowed a value of Von: -40 V as average value and a good ON/OFF ratio of not less than 10.sup.6.Comparative Example 1In this comparative example, reverse staggered (bottom gate) type MISFET devices as shown in FIG. 11 were prepared as in Example 1 except the conditions for forming the second insulating film.For each device, an insulating layer of amorphous SiO.sub.x was formed to a thic
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