| http://www.w3.org/ns/prov#value | - BRIEF DESCRIPTION OF THE DRAWINGS [0033] The above and other features and advantages of the present invention will become more apparent by describing in detail exemplary embodiments thereof with reference to the attached drawings in which: [0034]FIG. 1 is a graph of current density versus applied voltage in a MOS transistor that uses a conventional HfON film formed by ALD as a gate insulating film
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