| http://www.w3.org/ns/prov#value | - The combination of carbon and oxygen is effective in providing a desired level of selectivity between the etch rates of the ARC layer being etched and an underlying layer such as silicon oxide or silicon nitride and/or an overlayer such as a photoresist while at the same time balancing polymer build-up sufficiently to protect sidewalls of etched features while avoiding etch stop problems due to ex
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