| http://www.w3.org/ns/prov#value | - The tunable integrated semiconductor device 1 may comprise various layers, for example, a substrate 2, which substrate 2 may comprise semiconductor materials such as silicon, germanium, gallium arsenide, silicon-germanium or other suitable semiconductor materials selected from a group comprising elements from columns III-V, or columns II-VI of the periodic table, or compounds having a IV???IV allo
|
