| http://www.w3.org/ns/prov#value | - he present invention is a method of manufacturing a field effect transistor with a channel area formed on a strained Si layer which has been grown epitaxially on top of a SiGe layer, wherein the strained Si layer is formed using the aforementioned strained Si layer formation method of the present invention. [0031] Furthermore, a field effect transistor of the present invention is a field effect tr
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