| http://www.w3.org/ns/prov#value | - While the memory cell array in the core area in the above embodiment was of virtual grounding type, any other structures including NOR type and NAND type are allowable. [0056] The above embodiment is designed so that the silicon nitride film 15, which is a charge storage film, is subjected to the hydrogen plasma treatment after the formation thereof so as to remove electric charge stored therein,
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