| http://www.w3.org/ns/prov#value | - The first discharge region 44-1 is formed between the light incident surface of the silicon substrate 42 and the photoelectric conversion region 43G, while the second discharge region 44-2 is formed between the photoelectric conversion regions 43G and 43R.The first discharge region 44-1 is a region formed from n-type impurities at low concentration (N??? region) equivalent to the photoelectric con
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