| http://www.w3.org/ns/prov#value | - This tunneling magnetic resistance effect occurs when the intermediate layer is an insulator or a semiconductor including at least one element selected from oxygen, nitrogen, carbon and boron, and more specifically, this effect can be confirmed with oxides, nitrides, carbides, borides or semiconductors, such as SiO2, SiC, Si3N4, Al2O3, AlN, Cr2O3, TiC, HfO2, HfN, HfC, Ta2O5, TaN, TaC, BN, B4C., DL
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