| http://www.w3.org/ns/prov#value | - When the base 12 is a silicon substrate, a glass substrate, an epoxy substrate, a glass-epoxy substrate, a ceramic substrate, or the like, a method for forming the device hole can be suitably selected among physical-mechanical methods such as machining using a lathe or the like, and chemical methods including resist formation and etching, within a range in which the objects of the present inventio
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