| http://www.w3.org/ns/prov#value | - The assumptions for example 1 are as follows: There is no cavity 40; silicon island 26 is 185 microns on a side; the thickness of oxide layer 22 below silicon island 26 is 4000 Angstroms; thickness of silicon substrate 20 is 10 mils and the thickness of oxide layer 22 is much less than the width of trenches 30, making the vertical thermal resistance 56 from silicon island 26 the major consideratio
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