| http://www.w3.org/ns/prov#value | - Thus, in this embodiment, after ridge and groove are formed in the layer structure including the active layer formed on the substrate, light and current confinement structures can be fabricated by performing a single regrowth process, leading to the fabrication without a diffusion process of an optical semiconductor device, such as a laser, having p-type and n-type electrodes on one side of the su
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