| http://www.w3.org/ns/prov#value | - This completes the patterning of the gate electrodes, then the above steps are gone through to complete the nonvolatile memory transistor. [0099] When forming the tunnel oxide film in the ONO film of the MONOS type nonvolatile memory transistor (tunnel oxide film/nitride film/top oxide film) to a thickness of for example 3 nm or so, typical values of the specification of the thickness of the ONO f
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