| http://www.w3.org/ns/prov#value | - The HBT structure 100 further comprises a second conductivity type mono-crystalline base layer 103 (e.g., a base layer doped with a p-type dopant, such as boron (B)) adjacent to a first side of the emitter layer (e.g., below the emitter layer) and a first conductivity type electrode 105 (e.g., a polysilicon electrode doped with an n-type dopant) that is adjacent to a second side of the emitter lay
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