| http://www.w3.org/ns/prov#value | - When a capacitor having the stacked structure of the electrode/the ferroelectric material/the electrode which is employed in the FRAM or the that having the stacked structure of the electrode/the dielectric material having a higher dielectric constant/the electrode which is employed in the DRAM is manufactured, the noble metal, such as Pt, Ir, Ru, IrO2, RuO2, LSCO or SRO or the conductive oxides a
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