| http://www.w3.org/ns/prov#value | - BACKGROUND OF THE INVENTION [0001] The present invention relates to a non-volatile semiconductor memory device having memory cells based-on a stacked gate structure, and to a manufacturing method thereof. [0002] What has hitherto been known as a non-volatile semiconductor memory (EEPROM (Electrically Erasable Programmable Read-Only Memory)) capable of electrically reprogramming data, is a flash me
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