| http://www.w3.org/ns/prov#value | - The present invention can be applied to not only a manufacturing method of the thin film transistor described in this embodiment mode but also a top gate type (a planar type), a bottom gate type (an inversely staggered type), a dual gate type having two gate electrode layers which are arranged above and below a channel region with a gate insulating film interposed therebetween, and other structure
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