| http://www.w3.org/ns/prov#value | - The vacuum annealing can be performed using the same or similar method as described with reference to FIG. 1C. Through vacuum annealing, impurities, such as carbon, which remain on the HfO2 dielectric layer 232 can be effectively removed, and the HfO2 dielectric layer 232 can be effectively densified. [0078] Referring to FIG. 24D, a Cl barrier layer 234 is formed on the HfO2 dielectric layer 232 t
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