| http://www.w3.org/ns/prov#value | - In the case of crystallizing an amorphous semiconductor whose component is silicon and including germanium, or an amorphous silicon film including about 1 atomic % through 10 atomic % of germanium, it is necessary to make heating temperature more or less higher than that in the case of the amorphous silicon film and temperature is set to 500 through 700??? C., preferably, 550 through 600??? C.
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