| http://www.w3.org/ns/prov#value | - In one embodiment of the present invention, the switching device is a thin film transistor; a lower metal layer formed on a portion of the drawing-out electrode at the contact hole is formed of the same material as a gate electrode of the thin film transistor; and an upper metal layer of the drawing-out electrode is formed of the same material as a source electrode of the thin film transistor.
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