| http://www.w3.org/ns/prov#value | - The second insulating layer 128 is formed by a CVD method, a sputtering method, or the like using an insulating material such as silicon oxide, silicon nitride, silicon oxynitride (SiOxNy, (x>y)), or silicon nitride oxide (SiNxOy, (x>y)) with a single layer structure or a stacked structure.
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