| http://www.w3.org/ns/prov#value | - According to FIG. 18, the main dielectric layer 1540 is formed on the seed dielectric layer 1530 using ALD or MOCVD. It will be understood that the main dielectric layer can be a material such as HfO2, ZrO, or LaO. Furthermore, the metal constituent included in the main dielectric layer 1540 is the same as the metal constituent included in the seed dielectric layer 1530.
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