| http://www.w3.org/ns/prov#value | - Also in the peripheral circuit forming region is formed an element forming region LAc in the same manner. [0074] Next, a thermal oxide film having a thickness of about 8 nm for example is formed on the surface of each p-type well 8 by thermal oxidation (pre-oxidation), thereafter the thermal oxide film is removed and the surface of the semiconductor substrate 1 (p-type wells 8) is made clean, foll
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