| http://www.w3.org/ns/prov#value | - Although the discussion herein refers to static memory devices, the techniques are intended to be provided for a combination of devices, for example, memory devices such as bipolar, NMOS, CMOS, and CCD memories, including RAMs, ROMs, PROMs, EPROMs, and E2 PROMS; and circuits other than memories wherein the circuits formed on the semiconductor wafer substrate provide similar or non-similar function
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