| http://www.w3.org/ns/prov#value | - If the inorganic insulating film mainly containing silicon and nitrogen is formed by one of the above sputtering methods using silicon as the target and gas that contains noble gas and nitrogen, the film obtained can have a silicon content ratio of 25.0 atomic % or higher and 35.0 atomic % or lower and a nitrogen content ratio of 35.0 atomic % or higher and 65.0 atomic % or lower.
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