| http://www.w3.org/ns/prov#value | - Step 2: Formation of Insulating Film A support substrate 20 made of p-type Si single crystal of 8 inch diameter and 800 ??m thickness (resistivity is 0.01 to 0.02 ??cm) is formed with an insulating film 23 made of silicon oxide or the like having a thickness of for example about 200 to 300 nm.
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