| http://www.w3.org/ns/prov#value | - With reference to FIGS. 5 and 5A in which like reference numerals refer to like features in FIG. 4 and at a subsequent fabrication stage, the shallow trenches 48 are filled with amounts of an insulating or dielectric material, such as a high-density plasma (HDP) oxide or tetraethylorthosilicate (TEOS), deposited across the pad layer 44 and planarized by, for example, a CMP process.
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