| http://www.w3.org/ns/prov#value | - The invention will now be described, by way of example, with reference to the accompanying drawings, in which: FIG. 1 is a diagrammatic drawing of a metal-oxidesemiconductor (MOS) field-effect transistor; FIG. 2 is a graphical representation of characteristics of untreated and treated transistors; and FIG. 3 shows the effect of successive doses of radiation on a transistor.
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