| http://www.w3.org/ns/prov#value | - FIG. 1 a shows that an interlayer insulating film 3 is formed over a semiconductor substrate 1 having a semiconductor circuit such as transistors (not shown) and bit lines (not shown), and the interlayer insulating film 3 is etched to form storage node contact holes (not shown) to expose part of the semiconductor substrate 1.
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