| http://www.w3.org/ns/prov#value | - Another semiconductor device has a transistor including a source region, a drain region, a channel region, and a gate electrode provided on the channel region with an insulating film therebetween, wherein the channel region is a film mainly containing silicon or is silicon, and the insulating film is (1-x)AlO3/2.xAlN (where 0<x<1).
|
