| http://www.w3.org/ns/prov#value | - Furthermore, an isolation structure 304, for instance a trench isolation structure, which may be substantially comprised of any appropriate insulating material, such as silicon dioxide, silicon nitride and the like, may be provided to separate an active region 305 n, having an appropriate base dopant concentration for forming the transistor 350 n, from an active region 305 p, having an appropriate
|
