| http://www.w3.org/ns/prov#value | - Further, there is a method of forming the conductive connection by the source and drain wirings 416 of FIG. 9B when an opening portion for reaching the etching stopper 401 is formed in portions other than the active layer when opening the opening portion 415 for reaching the source and drain regions of the TFT in FIG. 9A. If this method is used, portions other than the active layer are made conduc
|
