| http://www.w3.org/ns/prov#value | - Subsequently, a sealing layer 324 formed from an insulating material (e.g., an inorganic insulating film including silicon) is formed with a thickness of 1 to 30 ??m over an entire surface resulting in a structure shown in FIG. 9B. Here, as an insulating material film, a silicon oxide film including nitrogen with a thickness of 1 ??m is formed by CVD. By using an insulating film formed by CVD, adh
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