| http://www.w3.org/ns/prov#value | - Further, when temperature dependence of critical stress for slip defect generation is measured in the similar manner as in the first embodiment, and the temperature distribution is measured and controlled in the similar manner as the second embodiment, it is possible to thermally process GaAs wafer doped with an impurity such as Si or Zn as well as wafers of other materials (Si, InP or the like) w
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