| http://www.w3.org/ns/prov#value | - Further, a second fabrication process for a semiconductor substrate according to the present invention is a fabrication process comprising: a step of bonding a principal surface of a first substrate to a principal surface of a second substrate, the first substrate being a Si substrate in which at least one layer of non-porous thin film is formed through a porous Si layer and in which the porous Si
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