| http://www.w3.org/ns/prov#value | - Subsequently, an impurity of a second conductivity type is ion-implanted in a region of the semiconductor substrate under the gate electrode through thegate electrode using the masking layer as a mask, thereby forming a channel-doped region.In the above-described second embodiment of the present invention, an insulating material such as silicon nitride or silicon oxide, preferably, silicon oxide c
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