| http://www.w3.org/ns/prov#value | - Further, an insulating film such as of SiO2 or SiN may also be deposited directly on the Si film or Si???Ge layer, for example, by a CVD method not by way of the thermal oxidization step. [0045] In the step of forming the Si???Ge layer on the SOI substrate, the surface flatness may be worsened or dislocation may occur sometimes since the internal strains increase depending on the method for format
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