| http://www.w3.org/ns/prov#value | - ushiki Kaisha ToshibaSemiconductor device and method of manufacturing the sameUS7646061May 29, 2007Jan 12, 2010Infineon Technologies Austria AgPower semiconductor component with charge compensation structure and method for producing the sameUS7851889 *Apr 30, 2007Dec 14, 2010Freescale Semiconductor, Inc.MOSFET device including a source with alternating P-type and N-type regionsUS7968919 *Dec 20, 2
|
