| http://www.w3.org/ns/prov#value | - Further, in order to realize the above structures, a structure of the present invention is a method of manufacturing a semiconductor device, having: a first step of patterning a first conducting film on an insulating surface, forming a first conducting layer; a second step of forming a lamination of an insulating film, a semiconductor film, and an n-type semiconductor film on said first conducting
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