| http://www.w3.org/ns/prov#value | - up raw material is set to 1000-5000 to grow the p-type nitride semiconductor.According to the present invention, there is a provided method for producing a p-type nitride semiconductor of BpAlqGarInsN (0.ltoreq.p.ltoreq.1, 0.ltoreq.q.ltoreq.1, 0.ltoreq.r.ltoreq.1, 0.ltoreq.s.ltoreq.1, p+q+r+s=1), wherein the p-typenitride semiconductor is grown at a growing rate of 4 .mu.m/hour or more.The method
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