| http://www.w3.org/ns/prov#value | - Further, the ion implantation or like other process is carried out by applying a passivation film composed of a material capable of epitaxial growing which can be removed with ease at a temperature and in an atmosphere under which the materials formed epitaxially therebelow are not decomposed or evaporated, particularly, a passivation film of a plural layer structure comprising material that is ep
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