| http://www.w3.org/ns/prov#value | - utilizing a 25 meV gain offsetand .about.50 K temperature rise;FIG. 3 is a table which tabulates the properties of In concentration, strain, calculated critical thickness (CT), peak transition energy at CT, peak transition wavelength at CT, and other properties of the strained InGaAs structures illustratedin FIG. 1;FIGS. 4a through 4d illustrate four examples of superlattice structures which may b
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